We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for SIMS analysis equipment.
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SIMS analysis equipment Product List and Ranking from 4 Manufacturers, Suppliers and Companies

SIMS analysis equipment Product List

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[Analysis Case] Evaluation of Damage Layer on Polymer Surface Due to Ion Irradiation

[Analysis Case] Evaluation of Damage Layer on Polymer Surface Due to Ion Irradiation

By using GCIB (Ar cluster), it is possible to evaluate the composition and thickness of the damaged layer.

By irradiating the surface of polymer materials with ions, changes in surface properties occur. Utilizing these changes, research is being conducted in a wide range of fields, including the development of functional materials. Evaluating the changes that occur in the surface state after ion irradiation is important for efficient research and development. In TOF-SIMS analysis, using a GCIB (Gas Cluster Ion Beam) for the sputtering ion beam makes it possible to evaluate the composition and thickness of the damage layer caused by ion irradiation on the surface of polymer materials.

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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

Quantification of impurities in AlGaN with various Al compositions is possible.

To determine impurity concentrations using SIMS analysis, it is necessary to use a standard sample with the same composition as the analysis sample. By preparing various Al compositions of AlGaN standard samples for AlGaN used in ultraviolet LEDs and power devices, MST can achieve more accurate quantification of impurities. We will introduce a case where, after disassembling a commercially available deep ultraviolet LED, SIMS analysis was conducted to determine the concentration of the dopant Mg and the distribution of the main component Al composition. Measurement method: SIMS Product fields: Lighting, power devices, optical devices Analysis purposes: Trace concentration evaluation, impurity evaluation, distribution evaluation, product investigation For more details, please download the materials or contact us.

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Reproducibility of SIMS analysis data

Reproducibility of SIMS analysis data

It is possible to evaluate the amount of impurities with high reproducibility.

In the manufacturing of semiconductor devices, the control of impurities such as dopants is a crucial process. When focusing on ion implantation, even slight differences can affect quality and performance, making precise control necessary. The high reproducibility of SIMS analysis is ideal for the development and maintenance of these processes.

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[Example of TOF-SIMS] Analysis of Li

[Example of TOF-SIMS] Analysis of Li

It is possible to detect with high sensitivity! We will introduce a case comparing the analysis of Li using TOF-SIMS and SEM-EDX.

We will introduce a case comparing the analysis of lithium (Li) using TOF-SIMS and SEM-EDX. While SEM-EDX is used for the analysis of contamination and foreign substances, it is difficult to detect Li with general EDX, excluding windowless EDX. On the other hand, TOF-SIMS can detect Li with high sensitivity. Please feel free to contact us if you need assistance. 【Overview】 ■ Analysis of stains on copper plates ■ SEM-EDX analysis → Difficult to detect Li ■ TOF-SIMS analysis → Li detectable *For more details, please refer to the PDF document or feel free to contact us.

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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.

It is possible to detect H, C, N, and O in semiconductor substrates at concentrations below 1 ppm (approximately 5E16 atoms/cm3) and F at concentrations below 1 ppb (approximately 5E13 atoms/cm3) using this method. Examples of measurements in actual FZ-Si (Figure 1) and the background levels of III-V semiconductors are presented (Table 2). In addition to III-V semiconductors, standard samples have been prepared for various materials such as metal films and insulating films, enabling highly sensitive quantitative analysis. This method is ideal for bulk analysis of various materials, including semiconductor substrates, and for evaluating the contamination of gas components during semiconductor processes.

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[Analysis Case] Component Analysis of Organic EL Devices

[Analysis Case] Component Analysis of Organic EL Devices

TOF-SIMS component analysis of slope-polished organic multilayer structure samples.

We conducted TOF-SIMS analysis on an organic EL device (Figure 1) estimated to be formed from four layers of different organic compounds (or organometallic complexes) using XPS. For multilayer structural samples, depth profiling analysis using sputtering is also performed; however, in this case, we created a slope surface to expose each layer without breaking the bonds of the constituent components. Molecular weight-related ions and fragment ions presumed to be Alq3, NPD, and CuPc were obtained, confirming that TOF-SIMS analysis of the slope surface is an effective method for component analysis of organic multilayer films.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

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[Analysis Case] Evaluation of H Concentration in IGZO Film

[Analysis Case] Evaluation of H Concentration in IGZO Film

It is possible to evaluate the depth distribution of H in the IGZO film with high sensitivity.

IGZO films are materials that are being researched and developed as TFT materials for displays. The carrier concentration changes according to the hydrogen concentration in the IGZO film, leading to variations in electrical characteristics. Therefore, it is necessary to accurately measure the hydrogen concentration in the film for evaluating the device characteristics and reliability of devices using IGZO films. We will introduce a case study that evaluated the hydrogen concentration in IGZO films under different heating conditions using SIMS.

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Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** The state-of-the-art secondary ion mass spectrometry (SIMS) device, NanoSIMS 50L, enables imaging measurements with spatial resolution approximately two orders of magnitude higher than conventional SIMS, thanks to its ion beam with a probe diameter of about 50 nm and a highly efficient mass analysis system. This paper introduces the features of the NanoSIMS 50L device and analysis examples. **Table of Contents** 1. Introduction 2. Overview of the Analytical Device 3. Analysis Example of Hair Cross-Section 4. Analysis Example of SiC Semiconductor Devices 5. Conclusion

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Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Introducing backside SIMS analysis conducted from the substrate side!

In SIMS analysis, when evaluating the diffusion of impurities from a high-concentration layer to a lower layer film, the effects of surface roughness and sputter etching may influence the crater edge effect and knock-on effects from the high-concentration layer. A method of evaluation that is not affected by these influences is Backside SIMS, which conducts SIMS analysis from the substrate side. In the attached PDF document, we introduce the evaluation of the diffusion distribution of F from a SiO2 film (FSG film) to a lower SiO2 film using Backside SIMS, so please take a look. 【Principle of Backside SIMS】 - By polishing the backside of the Si substrate to thin it, we can approach from the backside. - It is possible to control the remaining thickness of the Si substrate to create a thin film, to thin specific areas of patterned samples, or to selectively stop the etching of Si layers such as SiO2. In cases where there are layers that can stop etching, it is also possible to completely remove the Si substrate portion by wet etching. *For more details, please download the PDF or feel free to contact us.

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